The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Oct. 31, 2013
Applicant:
Hrl Laboratories, Llc, Malibu, CA (US);
Inventors:
Rajesh D Rajavel, Oak Park, CA (US);
Hasan Sharifi, Agoura Hills, CA (US);
Terence J De Lyon, Newbury Park, CA (US);
Pierre-Yves Delaunay, Santa Monica, CA (US);
Brett Z Nosho, Santa Monica, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); H01L 31/101 (2006.01); H01L 27/144 (2006.01); H01L 31/102 (2006.01); H01L 31/02 (2006.01); H01L 31/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/102 (2013.01);
Abstract
The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.