The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Oct. 15, 2014
Applicant:
Tokuyama Corporation, Yamaguchi, JP;
Inventors:
Assignee:
Tokuyama Corporation, Yamaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 29/32 (2006.01); H01L 29/04 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02576 (2013.01); H01L 21/02598 (2013.01); H01L 29/04 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/47 (2013.01); H01L 29/66143 (2013.01);
Abstract
A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×10to 1×10cmand a dislocation density of 10cmor less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.