The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jul. 28, 2015
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 51/0545 (2013.01); H01L 51/102 (2013.01);
Abstract
A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.