The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Apr. 07, 2014
Junichi Koezuka, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Masahiro Takahashi, Atsugi, JP;
Takuya Matsuo, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Junichi Koezuka, Tochigi, JP;
Kenichi Okazaki, Tochigi, JP;
Masahiro Takahashi, Atsugi, JP;
Takuya Matsuo, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.