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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748393 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Oct. 17, 2013

Silicon carbide semiconductor device with a trench

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Yoichiro Tarui, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Duy T Nguyen

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/788 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 21/049 (2013.01); H01L 29/0607 (2013.01); H01L 29/0657 (2013.01); H01L 29/0847 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/41766 (2013.01); H01L 29/41775 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/788 (2013.01); H01L 29/7813 (2013.01); H01L 29/7851 (2013.01); H01L 29/0878 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01);
Abstract

It is an object of the present invention to provide a silicon carbide semiconductor device that reduces a channel resistance and increases reliability of a gate insulating film. The present invention includes a trench partially formed in a surface layer of an epitaxial layer, a well layer formed along side surfaces and a bottom surface of the trench, a source region formed in a surface layer of the well layer on the bottom surface of the trench, a gate insulating film, and a gate electrode. The gate insulating film is formed along the side surfaces of the trench and has one end formed so as to reach the source region. The gate electrode is formed along the side surfaces of the trench and formed on the gate insulating film.

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