The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 13, 2015
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Inventor:
Keishirou Kumada, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/402 (2013.01);
Abstract
To prevent a malfunction of an overcurrent protection circuit without increasing an on-voltage, and to suppress a short circuit capacity, thus further reducing a switching loss, a trench gate IGBT is provided in which is incorporated a sense IGBT connected in parallel to a main IGBT, where only the sense IGBT portion includes a p-type channel region all over in a semiconductor substrate between adjacent parallel striped trenches, so that the capacitance of the MOS gate of the sense IGBT is smaller than the capacitance of the MOS gate of the main IGBT.