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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748360 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Aug. 24, 2015

Manufacturing method of semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takuya Hagiwara, Tokyo, JP;

Tetsuro Hanawa, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

John C Ingham

Assistant Examiner:

Frederick B Hargrove

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01); H01L 29/51 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 21/027 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66568 (2013.01); H01L 21/0206 (2013.01); H01L 21/0273 (2013.01); H01L 21/3105 (2013.01); H01L 21/31144 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 27/11573 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H01L 21/28282 (2013.01); H01L 29/42344 (2013.01);
Abstract

The present invention makes it possible to improve the reliability of a semiconductor device. In a manufacturing method of a semiconductor device according to an embodiment, when a resist pattern is formed over a cap insulating film comprising a silicon nitride film, the resist pattern is formed through the processes of coating, exposure, and development treatment of a chemical amplification type resist. Then the chemical amplification type resist is applied so as to directly touch the surface of the cap insulating film comprising the silicon nitride film and organic acid pretreatment is applied to the surface of the cap insulating film comprising the silicon nitride film before the coating of the chemical amplification type resist.

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