The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jun. 08, 2016
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventor:
Peter Anand Sharma, Albuquerque, NM (US);
Assignee:
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/477 (2006.01); H01L 21/385 (2006.01); H01L 43/14 (2006.01); H01L 43/10 (2006.01); H01L 21/426 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 21/385 (2013.01); H01L 21/426 (2013.01); H01L 21/477 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01);
Abstract
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.