The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jan. 06, 2017
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Pei-Heng Hung, New Taipei, TW;

Manoj Kumar, Dhanbad, IN;

Chia-Hao Lee, New Taipei, TW;

Chih-Cherng Liao, Jhudong Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/0834 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/66325 (2013.01); H01L 29/66681 (2013.01); H01L 29/7393 (2013.01); H01L 29/7816 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate and a semiconductor layer formed thereon; a first well region disposed in a portion of the semiconductor layer; a second well region disposed in another portion of the semiconductor layer; a pair of third well regions disposed in a portion of the semiconductor layer at opposite sides of the second well region; a plurality of isolation elements disposed over the semiconductor layer, respectively between the third well regions and the first and second well region; a deep well region disposed in a portion of the semiconductor substrate adjacent to the semiconductor layer between the first and second well region; a first doping region disposed in the first well region; and second doping regions disposed in the third well regions.


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