The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Dec. 10, 2015
Epigan NV, Hasselt, BE;
Joff Derluyn, Sint-Joris-Weert, BE;
Stefan Degroote, Scherpenheuvel-Zichem, BE;
Marianne Germain, Liege, BE;
EpiGaN NV, Hasselt, BE;
Abstract
Disclosed are methods of growing III-V epitaxial layers on a substrate, semiconductor structures thus obtained, and devices comprising such semiconductor structures. An example semiconductor substrate includes a substrate and a buffer layer on top of the substrate, where a conductive path is present between the substrate and buffer layer. A conductive path may be present in the conductive interface, and the conductive path may be interrupted by one or more local electrical isolations. The local electrical isolation(s) may be positioned with the device such that at least one of the local electrical isolation(s) is located between a high voltage terminal and a low voltage terminal of the device.