The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jun. 29, 2016
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Sungki Hong, Incheon, KR;

Byungyong Ahn, Goyang-si, KR;

Sangkug Han, Paju-si, KR;

Seungmin Lee, Goyang-si, KR;

Yujin Choi, Namyangju-si, KR;

Sunghoon Hong, Incheon, KR;

Youngwoon Yoon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 29/78603 (2013.01); H01L 29/78621 (2013.01); H01L 29/78633 (2013.01); H01L 29/78648 (2013.01); H01L 27/3232 (2013.01); H01L 27/3237 (2013.01); H01L 29/78609 (2013.01);
Abstract

A thin-film transistor substrate and a display device comprising the same are provided which can improve display quality by reducing or preventing deterioration of the characteristics of thin-film transistors. The thin-film transistor substrate comprises thin-film transistors on a lower protective metal layer. Each thin-film transistor comprises a buffer layer, a semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a source electrode and a drain electrode, and a first electrode. The lower protective metal layer is electrically connected to the gate electrode and overlaps the channel region of the semiconductor layer.


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