The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jun. 30, 2015
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Victor Lenchenkov, Sunnyvale, CA (US);

Sergey Velichko, Boise, ID (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 5/369 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01);
Abstract

A backside illumination image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a front side of a semiconductor substrate. In accordance with an embodiment, a trench isolation structure may be formed directly over the storage diode but not over the photodiode from a back side of the substrate. The backside trench isolation structure may be filled with absorptive material and can optionally be biased to a ground or negative voltage level. A light shielding layer may also be formed over the backside trench isolation structure on the back side of the substrate. The light shielding layer may be formed from absorptive material or reflective material, and may also be biased to a ground or negative voltage level.


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