The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 17, 2016
Lg Display Co., Ltd., Seoul, KR;
Sungkeun Lee, Goyang-si, KR;
Yongtae Song, Paju-si, KR;
Imkuk Kang, Paju-si, KR;
Sungjun Yun, Ansan-si, KR;
Woocheol Jeong, Goyang-si, KR;
LG DISPLAY CO., LTD., Seoul, KR;
Abstract
A method for manufacturing a thin film transistor substrate, the method can include a first mask process for forming a gate electrode on a substrate; a step for forming a gate insulating layer covering the gate electrode; a second mask process for forming a source electrode overlapping with one side of the gate electrode, and a drain electrode overlapping with other side of the gate electrode and being apart from the source electrode, on the gate insulating layer; and a third mask process for forming an oxide semiconductor layer extending from the source electrode to the drain electrode, and an etch stopper having the same shape and size with the oxide semiconductor layer on the oxide semiconductor layer.