The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Nov. 23, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Tohru Kawai, Ibaraki, JP;
Masahiro Shimizu, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/092 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0928 (2013.01); G11C 11/419 (2013.01);
Abstract
A semiconductor device aims to prevent a leak current from flowing between a well and a corner of an active region formed on an upper surface of another well in an SRAM. In a memory cell of the SRAM, a load MOSFET is formed. An end of an active region extending in y-direction is arranged to gradually go away from a p-well as it goes from a gate electrode Gside to a gate electrode Gside in such a manner that a distance in x-direction between the end of the active region and the p-well is larger than a shortest distance in the x-direction between the p-well and the active region.