The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jul. 11, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Raheel Azmat, Suwon-si, KR;

Sharma Deepak, Suwon-si, KR;

Chulhong Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 27/118 (2006.01); H01L 21/8234 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823821 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 21/823431 (2013.01); H01L 27/0924 (2013.01); H01L 27/11807 (2013.01); H01L 2027/11829 (2013.01); H01L 2027/11875 (2013.01);
Abstract

A semiconductor device, and a method of manufacturing the same, includes first and second gate structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, a dummy gate structure provided between the first and second gate structures, a first source/drain region between the first gate structure and the dummy gate structure, a second source/drain region between the second gate structure and the dummy gate structure, a connection contact provided on the dummy gate structure, and a common conductive line provided on the connection contact. The dummy gate structure extends in the first direction. The connection contact extends in the second direction to connect the first source/drain region to the second source/drain region. The common conductive line configured to a voltage to the first and second source/drain regions through the connection contact.


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