The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 02, 2016
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Assignee:
ROBERT BOSCH GMBH, Stuttgart, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/08 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0814 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/47 (2013.01); H01L 29/475 (2013.01);
Abstract
A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.