The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Dec. 16, 2015
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Yoshinao Miura, Tokyo, JP;

Hironobu Miyamoto, Ibaraki, JP;

Yasuhiro Okamoto, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 27/06 (2006.01); H01L 23/00 (2006.01); H01L 27/02 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 27/0203 (2013.01); H01L 27/0207 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 27/0605 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/00014 (2013.01);
Abstract

The ringing of a switching waveform of a semiconductor device is restrained. For example, an interconnect (L) is laid which functions as a source of a power transistor (Q) and a cathode of a diode (D), and further functioning as a drain of a power transistor (Q) and an anode of a diode (D). In other words, a power transistor and a diode coupled to this power transistor in series are formed in the same semiconductor chip; and further an interconnect functioning as a drain of the power transistor and an interconnect functioning as an anode of the diode are made common to each other. This structure makes it possible to decrease a parasite inductance between the power transistor and the diode coupled to each other in series.


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