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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9748186 B1

PDFFull Text
Date of Patent:
Aug. 29, 2017

Filed:

Sep. 03, 2015

Semiconductor device and method for manufacturing the semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Fumihiko Momose, Nagano, JP;

Takashi Saito, Matsumoto, JP;

Kazumasa Kido, Matsumoto, JP;

Yoshitaka Nishimura, Azumino, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Nicholas Tobergte

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/43 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/85 (2013.01); H01L 24/29 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05541 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/29101 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4851 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48724 (2013.01); H01L 2224/48747 (2013.01); H01L 2224/48755 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/48847 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85205 (2013.01); H01L 2924/2064 (2013.01);
Abstract

A semiconductor device has a module structure in which a semiconductor element and a circuit layer are electrically connected to each other by a wire. A front metal layer is formed on a surface of a top side electrode of the semiconductor element and the wire is bonded to the front metal layer by wire bonding. The front metal layer has a higher hardness than the top side electrode or the wire. A bonding interface of the wire with the metal film has a recrystallization temperature that is equal to or higher than 175° C. According to this structure, it is possible to improve the power cycle resistance of the semiconductor device.

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