The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

May. 31, 2016
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Ricky Alan Jackson, Richardson, TX (US);

Sudtida Lavangkul, Richardson, TX (US);

Erika Lynn Mazotti, San Martin, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/78 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 23/53261 (2013.01); H01L 23/53266 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01);
Abstract

An example apparatus includes a plurality of scribe streets arranged in rows and columns on the surface of a semiconductor wafer; and a plurality of integrated circuit dies arranged in rows and columns and spaced apart by the scribe streets. Each integrated circuit die includes plurality of active areas; a plurality of insulator layers overlying the active areas; a plurality of conductor layers interspersed with and separated by ones of the insulator layers; and a passivation layer overlying a top portion of the uppermost one of the conductor layers. A scribe seal in a scribe region surrounds the periphery of the integrated circuit dies, the scribe seal covered by the passivation layer; and a crack arrest structure is located surrounding and spaced from the scribe seal, and including an opening in the passivation layer that extends to and exposes the upper surface of the crack arrest structure. Methods are disclosed.


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