The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Feb. 24, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Young-jun Park, Suwon-si, KR;
Jung-inn Sohn, Hwaseong-si, KR;
Seung-nam Cha, Seoul, KR;
Ji-yeon Ku, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/08 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); B82Y 10/00 (2011.01); H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02609 (2013.01); B82Y 10/00 (2013.01); H01B 1/08 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 21/02603 (2013.01); H01L 21/02636 (2013.01); H01L 29/04 (2013.01); H01L 29/0665 (2013.01); H01L 29/0669 (2013.01); H01L 29/22 (2013.01);
Abstract
A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.