The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Apr. 27, 2011
Applicants:
Jun-hee Choi, Seongnam-si, KR;
Un-jeong Kim, Osan-si, KR;
Sang-jin Lee, Anyang-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 21/02 (2006.01); H01L 33/24 (2010.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02538 (2013.01); H01L 21/02422 (2013.01); H01L 21/02444 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 29/1606 (2013.01);
Abstract
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.