The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jun. 27, 2016
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Venkatraman Prabhakar, Pleasanton, CA (US);
Long T Hinh, San Jose, CA (US);
Sarath Chandran Puthenthermadam, Milpltas, CA (US);
Kaveh Shakeri, Campbell, CA (US);
Assignee:
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 14/0063 (2013.01); G11C 16/0466 (2013.01); G11C 16/14 (2013.01);
Abstract
Apparatuses and methods of pulse shaping a pulse signal for programming and erasing a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory cell are described. In one method a pulse shape of a pulse signal is controlled to include four or more phases for programming or erasing a SONOS memory cell. A write cycle is performed to program or erase the SONOS memory with the pulse signal with the four or more phases.