The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Nov. 21, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si OT, KR;

Inventor:

Seong-Min Seo, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); H01L 25/065 (2006.01); G11C 7/22 (2006.01); G11C 8/10 (2006.01); G11C 5/02 (2006.01); G11C 8/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G11C 5/02 (2013.01); G11C 7/22 (2013.01); G11C 8/06 (2013.01); G11C 8/10 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A stacked memory device includes a master semiconductor die and a plurality of slave semiconductor dies stacked on the master semiconductor die. The master semiconductor die includes a first power line coupled to a first power supply voltage, a second power line coupled to a second power supply voltage, a memory device coupled to the first power line, and a data input/output buffer coupled to the second power line. Each of the plurality of slave semiconductor dies includes third and fourth power lines and a memory device coupled to the third power line. The third power line is electrically connected to the first and fourth power lines, and the fourth power line is electrically disconnected from the second power line. The data input/output buffer buffers data communicated between an external device and the memory devices included in the master semiconductor die and the plurality of slave semiconductor dies.


Find Patent Forward Citations

Loading…