The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Apr. 22, 2015
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Kazutoshi Sako, Kanagawa, JP;

Tomokazu Matsuzaki, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); G05F 1/648 (2006.01); G05F 3/20 (2006.01); G05F 3/10 (2006.01); H03L 1/02 (2006.01); G05F 1/56 (2006.01); G05F 3/24 (2006.01); H03K 3/0231 (2006.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); G05F 1/561 (2013.01); G05F 3/10 (2013.01); G05F 3/20 (2013.01); G05F 3/245 (2013.01); H03L 1/022 (2013.01); H03K 3/0231 (2013.01);
Abstract

A semiconductor device includes: a voltage generation unit that generates a first voltage having a first temperature characteristic; a constant voltage generation unit that generates a constant voltage; and an adjustment unit that generates a second voltage having a second temperature characteristic and a third voltage having a third temperature characteristic using the first voltage and the constant voltage. The constant voltage generation unit generates the constant voltage independently of the adjustment unit. One of the second and third temperature characteristics is an opposite characteristic to the first temperature characteristic. The device can also include a control unit that selects one of the second and third voltages in response to a predetermined setting value.


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