The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Oct. 28, 2016
Applicant:

University of Ottawa, Ottawa, CA;

Inventors:

Giulio Vampa, Ottawa, CA;

Paul B. Corkum, Ottawa, CA;

Assignee:

University of Ottawa, Ottawa, Ontario, CA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/35 (2006.01); G02F 1/355 (2006.01); G02F 1/37 (2006.01); G02F 2/02 (2006.01);
U.S. Cl.
CPC ...
G02F 1/353 (2013.01); G02F 1/3556 (2013.01); G02F 1/37 (2013.01); G02F 2001/354 (2013.01); G02F 2202/104 (2013.01); G02F 2203/10 (2013.01);
Abstract

A method and apparatus is disclosed for generating tunable attosecond-scale radiation pulses, with a frequency in range of mid-infrared to ultra-violet, from a silicon medium. The invention utilizes an intense laser pulse to drive a high harmonic generation (HHG) process in a silicon medium and a weak secondary field to control the HHG process. The weak secondary field has a frequency equal to the second harmonic of the intense laser pulse. The spatial, temporal and spectral properties of the HHG process and the emitted harmonic beam are tuned by adjusting the relative delay between the two fields and the intensity of the weak secondary field.


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