The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Jan. 04, 2017
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Jin-Chern Chiou, Hsinchu, TW;
Shang-Wei Tsai, Jinhu Township, Kinmen County, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01N 27/12 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G01N 27/128 (2013.01); H01L 21/28035 (2013.01); H01L 21/31116 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 29/0847 (2013.01); H01L 29/4916 (2013.01);
Abstract
A CMOS-based process for manufacturing a semiconductor gas sensor includes the steps of: I) providing a semi-product, II) etching a substrate to remove a portion of the substrate and a portion of a first insulation layer so as to form a gas-sensing cavity, thereby to expose at least one sensing electrode; and III) depositing a gas-sensitive layer to cover the at least one sensing electrode.