The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Dec. 02, 2011
Applicants:

Stephan Wieber, Karlsruhe, DE;

Matthias Patz, Bottrop, DE;

Harald Stueger, Graz, AT;

Christoph Walkner, Graz, AT;

Inventors:

Stephan Wieber, Karlsruhe, DE;

Matthias Patz, Bottrop, DE;

Harald Stueger, Graz, AT;

Christoph Walkner, Graz, AT;

Assignee:

Evonik Degussa GmbH, Essen, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/08 (2006.01); C01B 33/107 (2006.01); B01J 31/02 (2006.01); C01B 33/04 (2006.01); C01B 33/021 (2006.01);
U.S. Cl.
CPC ...
C01B 33/10773 (2013.01); B01J 31/0267 (2013.01); C01B 33/021 (2013.01); C01B 33/04 (2013.01);
Abstract

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.


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