The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Jul. 01, 2016
Applicant:

Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);

Inventors:

Robert Actis, Burlington, MA (US);

Robert J. Lender, Jr., Pepperell, MA (US);

Jared P. Majcher, Manchester, NH (US);

John R. Muir, No. Chemlsford, MA (US);

Edwin C. Powers, Methuen, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 11/12 (2006.01); H04B 1/04 (2006.01); H03F 3/19 (2006.01); H01L 25/065 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H03F 3/21 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/02 (2006.01);
U.S. Cl.
CPC ...
H04B 1/04 (2013.01); H01L 23/02 (2013.01); H01L 23/3675 (2013.01); H01L 23/3732 (2013.01); H01L 23/3736 (2013.01); H01L 23/66 (2013.01); H01L 24/32 (2013.01); H01L 25/0655 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32502 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1423 (2013.01); H01L 2924/1426 (2013.01); H01L 2924/15747 (2013.01); H03F 2200/111 (2013.01); H03F 2200/451 (2013.01); H03F 2200/552 (2013.01);
Abstract

A solid-state amplifier architecture is disclosed. In some embodiments, the disclosed architecture may include first and second channel chipsets configured to amplify either the entire instantaneous frequency band of a radio frequency (RF) input signal or, respectively, sub-bands thereof, which may be divided proportionally between the two chipsets. In some cases, the chipsets may be configured to amplify frequencies in excess of the entire K-band and K-band frequencies simultaneously. In some cases, the architecture may be configured to address a signal received, for instance, from an electronic warfare (EW) system to a log amplifier stage configured to output a signal to the EW system, in response to which the EW system may generate a RF signal for amplification by the architecture for transmission. To facilitate heat dissipation, the architecture may be coupled, in part or in whole, with a thermally conductive carrier, optionally with an intervening diamond heat spreader layer.


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