The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Sep. 13, 2012
Applicants:
Noboru Miyamoto, Tokyo, JP;
Fumio Wada, Tokyo, JP;
Inventors:
Noboru Miyamoto, Tokyo, JP;
Fumio Wada, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); B60L 11/18 (2006.01); H01L 29/78 (2006.01); H03K 17/08 (2006.01); H02M 3/335 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H02M 3/335 (2013.01); B60L 11/18 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/78 (2013.01); H02M 1/08 (2013.01); H03K 17/08 (2013.01);
Abstract
A semiconductor device of the present invention includes a transistor having a drain and a source, a voltage being applied between the drain and the source from a high-voltage power supply, a drive device that generates a source voltage and a gate voltage for the transistor from a voltage of a low-voltage power supply lower than that of the high-voltage power supply, and a voltage dividing circuit connected to the low-voltage power supply, wherein when the source voltage is lower than a certain value, an output voltage from the voltage dividing circuit is applied to the source.