The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Jan. 29, 2016
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventors:

Fumio Tonomura, Tokyo, JP;

Hideo Ishii, Tokyo, JP;

Tsuyoshi Ota, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Koto-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 7/00 (2006.01); G01R 19/00 (2006.01); H01M 10/48 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); G01R 31/36 (2006.01); H01M 10/42 (2006.01); H01L 27/02 (2006.01); G01R 19/165 (2006.01);
U.S. Cl.
CPC ...
H02J 7/0029 (2013.01); G01R 19/00 (2013.01); G01R 31/3606 (2013.01); H01L 27/088 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01); H01M 10/48 (2013.01); G01R 19/16519 (2013.01); G01R 19/16542 (2013.01); H01L 27/0207 (2013.01); H01M 2010/4278 (2013.01); H02J 2007/004 (2013.01); H02J 2007/0037 (2013.01); H02J 2007/0039 (2013.01);
Abstract

A cell protection system includes a charge control MOSFET, a charge current detection MOSFET, a discharge control MOSFET, a discharge current detection MOSFET, a charge current detection resistance, a discharge current detection resistance and a control circuit. The charge current detection MOSFET has a drain and a gate common with the charge control MOSFET. The discharge control MOSFET has a drain common with the charge control MOSFET. The discharge current MOSFET has a drain and a gate common with discharge control MOSFET. The charge current detection resistances and the discharge current detection resistance are provided in correspondence to the charge current detection MOSFET and the discharge current detection MOSFET, respectively. The control circuit generates a gate control signal for the charge control MOSFET and the charge current detection MOSFET by using the charge current detection resistance and generates a gate control signal for the charge control MOSFET and the discharge current detection MOSFET by using the discharge current detection resistance.


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