The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
May. 04, 2016
Wisconsin Alumni Research Foundation, Madison, WI (US);
Dan Botez, Madison, WI (US);
Christopher A. Sigler, Madison, WI (US);
Thomas L. Earles, Verona, WI (US);
Jeremy D. Kirch, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
A terahertz quantum cascade laser device is provided comprising a substrate having a top substrate surface, a bottom substrate surface, and an exit facet extending between the top substrate surface and the bottom substrate surface at an angle θ. The device comprises a waveguide structure having a top surface, a bottom surface, a front facet extending between the top surface and the bottom surface and positioned proximate to the exit facet, and a back facet extending between the top surface and the bottom surface and oppositely facing the front facet. The waveguide structure comprises a quantum cascade laser structure configured to generate light comprising light of a first frequency ω, light of a second frequency ω, and light of a third frequency ω, wherein ω=ω−ω; an upper cladding layer; and a lower cladding layer. The device comprises a distributed feedback grating layer configured to provide optical feedback for one or both of the light of the first frequency ωand the light of the second frequency ωand to produce lasing at one or both of the first frequency ωand the second frequency ω, thereby resulting in laser emission at the third frequency ωat a Cherenkov angle θthrough the bottom surface of the waveguide structure into the substrate and exiting the substrate through the exit facet. The device comprises a high-reflectivity coating on the front facet of the waveguide structure.