The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 18, 2014
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A nitride semiconductor light emitting elementincludes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrodewhich is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layerin between, a first current diffusing layerwhich is formed between the first current non-injection layerand the first electrode, a second electrodewhich is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layerin between, a second current diffusing layerwhich is formed on the second region and on the second current non-injection layer, and an extending portionwhich extends from the first electrodeand reaches the exposed first conductivity type nitride semiconductor layer.