The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jun. 07, 2016
Playnitride Inc., Tainan, TW;
PlayNitride Inc., Tainan, TW;
Abstract
A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InGaN, where 0<x<1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than −0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.