The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 19, 2016
Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Daniel Fuhrmann, Heilbronn, DE;

Victor Khorenko, Neuenstadt a.K., DE;

Wolfgang Guter, Stuttgart, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 31/00 (2006.01); H01L 29/88 (2006.01); H01L 29/205 (2006.01); H01L 31/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01);
U.S. Cl.
CPC ...
H01L 29/88 (2013.01); H01L 29/205 (2013.01); H01L 31/02019 (2013.01); H01L 31/03046 (2013.01); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01);
Abstract

A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.


Find Patent Forward Citations

Loading…