The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 04, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Tsuneo Ogura, Kamakura Kanagawa, JP;

Tomoko Matsudai, Shibuya Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 29/0684 (2013.01); H01L 29/66136 (2013.01); H01L 29/7395 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the second electrode. The third semiconductor region is provided between the first semiconductor region and the second electrode, is provided beside the second semiconductor region in a second direction crossing a first direction from the first electrode toward the second electrode, and a portion of the first semiconductor region is positioned between the third and second semiconductor regions. The fourth semiconductor region is provided between the portion of the first semiconductor region and the second electrode and has a greater impurity concentration than the second and third semiconductor regions.


Find Patent Forward Citations

Ogura, Tsuneo. (2017). Semiconductor device (U.S. Patent No. 9741872). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9741872

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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