The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jul. 07, 2015
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Po-Li Shih, Hsinchu, TW;
Yi-Chun Kao, Hsinchu, TW;
Chih-Lung Lee, Hsinchu, TW;
Hsin-Hua Lin, Hsinchu, TW;
Kuo-Lung Fang, Hsinchu, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Tapiei, TW;
Abstract
A thin film transistor (TFT) includes a gate, a gate insulation layer, a channel, a source, and a drain. The gate is formed on a substrate. The gate insulation layer covers the gate and the substrate. The channel layer is formed on the gate insulation layer to correspond with the gate. The source and a drain are respectively coupled at opposite sides of the channel layer. The channel layer includes a conductor layer and a semiconductor layer. The semiconductor layer includes a first portion and a second portion respectively coupled at opposite sides of the conductor layer.