The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 04, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Keun Hee Bai, Suwon-si, KR;
Kyoung Hwan Yeo, Seoul, KR;
Seung Seok Ha, Hwaseong-si, KR;
Seung Ju Park, Hwaseong-si, KR;
Do Hyoung Kim, Hwaseong-si, KR;
Myeong Cheol Kim, Suwon-si, KR;
Jae Hyoung Koo, Yongin-si, KR;
Ki Byung Park, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.