The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Jun. 21, 2016
Applicant:

Powerex, Inc., Youngwood, PA (US);

Inventor:

Tsutomu Nakagawa, Irwin, PA (US);

Assignee:

Powerex, Inc., Youngwood, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/749 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/749 (2013.01); H01L 29/0834 (2013.01); H01L 29/0839 (2013.01); H01L 29/41716 (2013.01);
Abstract

A thyristor device that can include a disc-shaped device comprising a semiconductor material forming alternating p-n-p-n type layers. The device can include a gate area extending from an external gate lead contact point to a plurality of thyristor units connected in parallel. Each thyristor unit can include at least one exposed pB layer portion to form at least one plural point to which gate current can be directed. Further, an insulator layer can be formed over the gate area to insulate at least a portion of the gate electrode from the pB layer so that displacement current can be directed to short dots and then to the plural points. Current entering each thyristor unit can generate a turned-on area at each thyristor unit that spreads throughout the thyristor device.


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