The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Feb. 12, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Mitsuhiko Kitagawa, Bunkyo Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/744 (2006.01); H01L 29/749 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H03K 17/567 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0634 (2013.01); H01L 29/0878 (2013.01); H01L 29/7813 (2013.01); H03K 17/567 (2013.01); H03K 2017/6878 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, a first electrode connected to the second semiconductor layer and the fourth semiconductor layer, a second electrode facing the second semiconductor layer with an insulating film interposed, a fifth semiconductor layer of the second conductivity type, a sixth semiconductor layer of the first conductivity type, a seventh semiconductor layer of the second conductivity type, a third electrode connected to the fifth semiconductor layer and the seventh semiconductor layer, and a fourth electrode facing the fifth semiconductor layer with an insulating film interposed.


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