The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Aug. 18, 2015
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Huojin Tu, Shanghai, CN;
Abstract
The present disclosure provides a method for forming a semiconductor device. The method includes providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and forming trenches in the semiconductor substrate on both sides of the gate structure. The method also includes forming a stress layer on inner sidewalls of each trench to fill up the trench; forming an interlayer on the stress layer, and forming a capping layer on the interlayer, wherein a top surface of the capping layer is higher than a top surface of the semiconductor substrate, and a lattice mismatch between the interlayer and the capping layer is lower than a lattice mismatch between the capping layer and the stress layer.