The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Aug. 05, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Toru Hiyoshi, Osaka, JP;
Taku Horii, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Shunsuke Yamada, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01); H01L 29/16 (2006.01); H01L 21/28 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/049 (2013.01); H01L 21/28247 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/66068 (2013.01); H01L 29/7395 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01);
Abstract
A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor layer, and a gate electrode provided on the gate insulating film, wherein the gate electrode has a polysilicon layer at least on a side of an interface with the gate insulating film, and the gate insulating film has an oxide film derived from the polysilicon layer, at an interface between the gate insulating film and the polysilicon layer of the gate electrode.