The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Oct. 28, 2015
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Kyung-Wan Kim, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 27/11514 (2017.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 13/16 (2006.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G06F 3/0604 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0802 (2013.01); G06F 13/1673 (2013.01); H01L 27/11514 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/60 (2013.01); H01L 27/11597 (2013.01);
Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a vertical electrode formed over a substrate; a plurality of first memory elements and a plurality of first interlayer dielectric layers alternately stacked along a first side surface of the vertical electrode; and a plurality of second memory elements and a plurality of second interlayer dielectric layers alternately stacked along a second side surface of the vertical electrode, and the plurality of first memory elements correspond to the plurality of second interlayer dielectric layers, respectively, in the vertical direction.