The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Jun. 29, 2016
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Inventor:
Junyan Hu, Wuhan, CN;
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan, Hubei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/247 (2013.01); H01L 29/78693 (2013.01);
Abstract
Disclosed is a method for manufacturing a TFT substrate, which uses one partial transmitting mask to form patterns of an active layer, a gate insulation layer, and a gate electrode through photolithography such that the entire process for manufacturing TFT substrate can be completely conducted by using only three masks. Compared to the prior art, one mask is save so that the operation is simplified and the manufacturing cost is reduced.