The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Sep. 08, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Chunsheng Jiang, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/77 (2017.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/426 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 21/02178 (2013.01); H01L 21/02321 (2013.01); H01L 21/02612 (2013.01); H01L 21/426 (2013.01); H01L 21/77 (2013.01); H01L 27/12 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1288 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor, a pixel structure, an array substrate, a display device, a method for manufacturing a thin film transistor, and a method for manufacturing a pixel structure are disclosed. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, wherein a first passivation layer made from an aluminum oxide material is provided on the source electrode and the drain electrode, and an active layer made from an aluminum oxide material doped with ions is provided in a region of the first passivation layer corresponding to the gate electrode. Since the first passivation layer as insulation material is doped with the ions to form an active layer, the etching stop layer may be omitted, thereby simplifying the structure of the thin film transistor.


Find Patent Forward Citations

Loading…