The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Jan. 12, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Inventors:

Hyun-Wook Lee, Gwacheon-si, KR;

Daewoong Kang, Seoul, KR;

Dae Sin Kim, Hwaseong-si, KR;

Kwang Soo Seol, Seongnam-si, KR;

Homin Son, Seoul, KR;

Seunghyun Lim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/423 (2006.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28282 (2013.01); H01L 29/4234 (2013.01); H01L 29/42348 (2013.01); H01L 27/11556 (2013.01);
Abstract

A semiconductor device includes a stack comprising insulating patterns vertically stacked on a substrate and gate patterns interposed between the insulating patterns, an active pillar passing through the stack and electrically connected to the substrate and a charge storing layer interposed between the stack and the active pillar. The charge storing layer includes a first portion between the active pillar and one of the gate patterns, a second portion between the active pillar and one of the insulating patterns, and a third portion joining the first portion to the second portion and having a thickness less than that of the first portion.


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