The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Mar. 04, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11524 (2017.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/28273 (2013.01); H01L 29/42328 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

According to one embodiment, the first separation film separates the control electrode, the first insulating layer, the charge storage layer, the intermediate insulating layer, the floating electrode layer, and the second insulating layer in a first direction. The second separation film separates a first stacked unit in a second direction. The first stacked unit includes the charge storage layer, the intermediate insulating layer, the floating electrode layer, the second insulating layer, and the semiconductor layer. The second direction intersects the first direction. The second separation film contains silicon.


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