The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Apr. 29, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Yoshihiro Tsukahara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 25/07 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3114 (2013.01); H01L 23/528 (2013.01); H01L 24/06 (2013.01); H01L 25/071 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/20271 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate in which a through hole is formed, a transistor formed on the upper surface side of the semiconductor substrate, a detection circuit formed on the upper surface side of the semiconductor substrate and connected to the transistor, a dielectric film covering the transistor and the detection circuit, a solder bump formed on the dielectric film, and a pad electrode having a first portion connected to an output of the detection circuit in the through hole, and a second portion connected to the first portion and provided on a lower surface of the semiconductor substrate.


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