The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Nov. 10, 2016
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Sven Trester, Goessendorf, AT;
Claus Grzyb, Hamburg, DE;
Assignee:
NXP B.V., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/573 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/76838 (2013.01); H01L 23/528 (2013.01);
Abstract
A semiconductor die with backside protection includes an active region and a first polysilicon layer formed on a front side of a semiconductor substrate. A signal net is connected to the first polysilicon layer by way of a metal contact and a conductive wire is formed above the active region. During an invasive attack, when a trench is formed in the substrate and an electrically conductive filling is deposited in the trench, the signal net, the conductive wire, and the first polysilicon shape form a short-circuit, which renders the die dysfunctional and thereby foiling the invasive attack.