The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Mar. 10, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Inventors:
Taishi Ishikura, Kuwana Mie, JP;
Atsunobu Isobayashi, Yokkaichi Mie, JP;
Tatsuro Saito, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Tadashi Sakai, Yokohama Kanagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53276 (2013.01); H01L 21/76871 (2013.01); H01L 21/76892 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes an underlayer formed on a substrate, a catalyst layer disposed on the underlayer and extending in an interconnect length direction. The device further includes an upper graphene layer formed on an upper face of the catalyst layer, and side graphene layers provided on two respective side faces of the catalyst layer, the two side faces extending in the interconnect length direction.