The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2017
Filed:
Dec. 11, 2014
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Youichi Kamada, Kawasaki, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/4763 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/20 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53223 (2013.01); H01L 21/76841 (2013.01); H01L 21/823475 (2013.01); H01L 23/53252 (2013.01); H01L 29/452 (2013.01); H01L 29/454 (2013.01); H01L 29/4966 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/11 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/4903 (2013.01); H01L 2924/181 (2013.01);
Abstract
A semiconductor device includes an electrode material diffusion suppression layer provided either between a gate electrode and a gate insulation film, between Al-containing ohmic electrodes and an Au interconnection, and below the gate electrode and above the Al-containing ohmic electrodes, the electrode material diffusion suppression layer having a structure wherein a first the TaN layer, a Ta layer, and a second the TaN layer are stacked in sequence.